According to news from this website on September 3, Korean media etnews reported yesterday (local time) that Samsung Electronics and SK Hynix’s “HBM-like” stacked structure mobile memory products will be commercialized after 2026. Sources said that the two Korean memory giants regard stacked mobile memory as an important source of future revenue and plan to expand "HBM-like memory" to smartphones, tablets and laptops to provide power for end-side AI. According to previous reports on this site, Samsung Electronics’ product is called LPWide I/O memory, and SK Hynix calls this technology VFO. The two companies have used roughly the same technical route, which is to combine fan-out packaging and vertical channels. Samsung Electronics’ LPWide I/O memory has a bit width of 512

According to news from this site on July 30, Micron announced today (local time) that its ninth generation (site note: 276 layers) 3DTLC NAND flash memory will be mass-produced and shipped. Micron said that its G9NAND has the industry's highest I/O transfer rate of 3.6GB/s (i.e. 3600MT/s flash memory interface rate), which is 50% higher than the existing competing products of 2400MT/s, and can better meet the needs of data-intensive workloads. High throughput requirements. At the same time, Micron's G9NAND is 99% and 88% higher than other solutions on the market in terms of write bandwidth and read bandwidth respectively. This NAND particle-level advantage will bring performance and energy efficiency to solid-state drives and embedded storage solutions. improvement. In addition, like previous generations of Micron NAND flash memory, Micron 276

According to news from this site on July 3, according to Korean media TheElec, Samsung tried to use molybdenum (Mo) for the first time in the "metal wiring" (metalwiring) of its 9th generation V-NAND. Note from this site: The eight major processes in the semiconductor manufacturing process are: wafer manufacturing oxidation photolithography etching deposition metal wiring testing packaging metal wiring process mainly uses different methods to connect billions of electronic components to form different semiconductors (CPU , GPU, etc.), it can be said to "inject life into semiconductors." Sources say Samsung has introduced five Mo deposition machines from Lam Research, and plans to introduce 20 more pieces of equipment next year. In addition to Samsung Electronics, companies such as SK Hynix, Micron and Kioxia are also

According to news on August 9, at the FMS2024 Summit, SK Hynix demonstrated its latest storage products, including UFS4.1 universal flash memory that has not yet officially released specifications. According to the official website of the JEDEC Solid State Technology Association, the latest UFS specification currently announced is UFS4.0 in August 2022. Its theoretical interface speed is as high as 46.4Gbps. It is expected that UFS4.1 will further improve the transmission rate. 1. Hynix demonstrated 512GB and 1TBUFS4.1 general-purpose flash memory products, based on 321-layer V91TbTLCNAND flash memory. SK Hynix also exhibited 3.2GbpsV92TbQLC and 3.6GbpsV9H1TbTLC particles. Hynix shows off V7-based

Local fine-tuning of DeepSeek class models faces the challenge of insufficient computing resources and expertise. To address these challenges, the following strategies can be adopted: Model quantization: convert model parameters into low-precision integers, reducing memory footprint. Use smaller models: Select a pretrained model with smaller parameters for easier local fine-tuning. Data selection and preprocessing: Select high-quality data and perform appropriate preprocessing to avoid poor data quality affecting model effectiveness. Batch training: For large data sets, load data in batches for training to avoid memory overflow. Acceleration with GPU: Use independent graphics cards to accelerate the training process and shorten the training time.

When the prices of ultra-high-frequency flagship memories such as 7600MT/s and 8000MT/s are generally high, Lexar has taken action. They have launched a new memory series called Ares Wings ARES RGB DDR5, with 7600 C36 and 8000 C38 is available in two specifications. The 16GB*2 sets are priced at 1,299 yuan and 1,499 yuan respectively, which is very cost-effective. This site has obtained the 8000 C38 version of Wings of War, and will bring you its unboxing pictures. The packaging of Lexar Wings ARES RGB DDR5 memory is well designed, using eye-catching black and red color schemes with colorful printing. There is an exclusive &quo in the upper left corner of the packaging.

According to news from this website on August 9, according to a press release issued by SK Hynix yesterday local time, the company demonstrated a series of new storage products at the FMS2024 Summit, including USF4.1 universal flash memory that has not yet officially released specifications. According to the official website of the JEDEC Solid State Technology Association, the latest UFS specification currently announced is UFS4.0 in August 2022. UFS4.0 specifies a theoretical interface speed of up to 46.4Gbps for each device, and USF4.1 is expected to further improve the transmission rate. ▲JEDECUFS specification page SK Hynix demonstrated two UFS4.1 general-purpose flash memories with capacities of 512GB and 1TB respectively, both based on the 321-layer stacked V91TbTLCNAND flash memory.

According to news from this website on July 23, the JEDEC Solid State Technology Association, the microelectronics standard setter, announced on the 22nd local time that the DDR5MRDIMM and LPDDR6CAMM memory technical specifications will be officially launched soon, and introduced the key details of these two memories. The "MR" in DDR5MRDIMM stands for MultiplexedRank, which means that the memory supports two or more Ranks and can combine and transmit multiple data signals on a single channel without additional physical The connection can effectively increase the bandwidth. JEDEC has planned multiple generations of DDR5MRDIMM memory, with the goal of eventually increasing its bandwidth to 12.8Gbps, compared with the current 6.4Gbps of DDR5RDIMM memory.